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| .050" NPN Phototransistors TO-46 Lensed Package VTT1115, 16, 17 PACKAGE DIMENSIONS inch (mm) CASE 3 TO-46 HERMETIC (LENSED) CHIP TYPE: 50T PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to the VTE11xx series of IREDs. ABSOLUTE MAXIMUM RATINGS (@ 25C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40C to 110C -40C to 110C 250 mW 3.12 mW/C 200 mA 260C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also typical curves, pages 91-92) Light Current lC mA Min. VTT1115 VTT1116 VTT1117 1.0 2.0 4.0 Max. -- -- -- H fc (mW/cm2) VCE = 5.0 V 20 (1) 20 (1) 20 (1) Dark Current lCEO H=0 (nA) Max. 100 100 100 VCE (Volts) 10 10 10 Collector Breakdown VBR(CEO) lC = 100 A H=0 Volts, Min. 30 30 30 Emitter Breakdown VBR(ECO) lE = 100 A H=0 Volts, Min. 6.0 4.0 4.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.40 0.40 0.40 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 sec, Typ. 5.0 8.0 8.0 Typ. 15 15 15 Angular Response 1/2 Part Number Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 103 |
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